TI Releases Gen 2 Silicon

Published: September 24, 2006, By pffc-online.com

PRESS RELEASE

DALLAS, TX—Texas Instruments (TI) has announced the availability of its EPCglobal-certified Gen 2 ultra-high frequency (UHF) silicon. Offered in wafer and strap form factors, TI has developed its Gen 2 silicon on an analog process node at 130 nanometers with a built-in Schottky diode for more efficient conversion of radio frequency (RF) signal energy. The result is silicon chips with low power consumption and increased chip-to-reader sensitivity. Users also can write to TI's chips under the lowest RF power conditions in spite of background electromagnetic interference (EMI) common in typical supply chain factory floor and warehouse environments.

TI's Gen 2 silicon is available in three forms: bare wafers to support various assembly processes; processed wafers (bumped, sawn with back grind) that are suitable for immediate use with commercially available inlay equipment; and silicon chip on straps for label and packaging manufacturers who are printing their own antennas. TI also offers reference antenna designs enabling customers to develop labels and tags which optimize its Gen 2 silicon.

To learn more, visit ti.com/epcgen2.